Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > SS35-1HE3_B/I

SS35-1HE3_B/I Vishay General Semiconductor - Diodes Division

Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A

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Technische Details SS35-1HE3_B/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 50V 3A DO214AB, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 500 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A.