SS35HE3_B/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3500+ | 0.33 EUR |
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Technische Details SS35HE3_B/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote SS35HE3_B/I nach Preis ab 0.46 EUR bis 1.64 EUR
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SS35HE3_B/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V Qualification: AEC-Q101 |
auf Bestellung 6900 Stücke: Lieferzeit 10-14 Tag (e) |
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Produkt ist nicht verfügbar |