SS5P6HM3J/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Technische Details SS5P6HM3J/86A Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 150 µA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A, Voltage - DC Reverse (Vr) (Max): 60 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).