SSF8970 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 200A, 80V,
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
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Technische Details SSF8970 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 200A, 80V,, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V.