Produkte > GOOD-ARK SEMICONDUCTOR > SSFB2310L
SSFB2310L

SSFB2310L Good-Ark Semiconductor

SSFB2310L.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.01W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSFB2310L Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V, Power Dissipation (Max): 2.01W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V.

Weitere Produktangebote SSFB2310L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSFB2310L SSFB2310L Hersteller : Good-Ark Semiconductor SSFB2310L.pdf Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.01W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH