SSFB2310L Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 9.9A, 20V,, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-DFN (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.01W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).