SSFQ6907

SSFQ6907 Good-Ark Semiconductor


SSFQ6907.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
auf Bestellung 5315 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
25+0.73 EUR
30+0.6 EUR
100+0.46 EUR
250+0.39 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSFQ6907 Good-Ark Semiconductor

Description: MOSFET, P-CH, SINGLE, -5A,-60V,, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, Power Dissipation (Max): 4W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V.

Weitere Produktangebote SSFQ6907

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSFQ6907 SSFQ6907 Hersteller : Good-Ark Semiconductor SSFQ6907.pdf Description: MOSFET, P-CH, SINGLE, -5A,-60V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Power Dissipation (Max): 4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH