SSM10N961L,ELF Toshiba
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.51 EUR |
| 5000+ | 0.5 EUR |
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Technische Details SSM10N961L,ELF Toshiba
Description: MOSFET 2N-CH 30V 9A TCSPAG, Packaging: Tape & Reel (TR), Package / Case: 10-XFLGA, CSP, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 880mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TCSPAG-341501.
Weitere Produktangebote SSM10N961L,ELF nach Preis ab 0.51 EUR bis 2.11 EUR
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| SSM10N961L,ELF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 30V 9A TCSPAGPackaging: Cut Tape (CT) Package / Case: 10-XFLGA, CSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TCSPAG-341501 |
auf Bestellung 8995 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM10N961L,ELF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
Description: MOSFET 2N-CH 30V 9A TCSPAG
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA, CSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TCSPAG-341501
auf Bestellung 8995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.57 EUR |
| 5000+ | 0.51 EUR |