Technische Details SSM1N45BTF
Description: MOSFET N-CH 450V 500MA SOT223-4, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±50V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SSM1N45BTF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SSM1N45BTF | onsemi |
Description: MOSFET N-CH 450V 500MA SOT223-4Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±50V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
SSM1N45BTF | onsemi / Fairchild |
MOSFET 450V/0.5A/N-CH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SSM1N45BTF |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 450V 500MA SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±50V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 450V 500MA SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±50V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSM1N45BTF |
![]() |
Hersteller: onsemi / Fairchild
MOSFET 450V/0.5A/N-CH
MOSFET 450V/0.5A/N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



