Technische Details SSM1N45BTF
Description: MOSFET N-CH 450V 500MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±50V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V. 
Weitere Produktangebote SSM1N45BTF
| Foto | Bezeichnung | Hersteller | Beschreibung | 
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        SSM1N45BTF | Hersteller : onsemi | 
            
                         Description: MOSFET N-CH 450V 500MA SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±50V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V  | 
        
                             Produkt ist nicht verfügbar                      | 
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        SSM1N45BTF | Hersteller : onsemi / Fairchild | 
            
                         MOSFET 450V/0.5A/N-CH         | 
        
                             Produkt ist nicht verfügbar                      | 
        


