SSM3J112TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 30V 1.1A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
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Technische Details SSM3J112TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.1A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V.
Weitere Produktangebote SSM3J112TU,LF
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SSM3J112TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 1.1A UFM Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V |
Produkt ist nicht verfügbar |
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SSM3J112TU,LF | Hersteller : Toshiba |
MOSFET Small-signal MOSFET ID=-1.1A VDSS=-30V |
Produkt ist nicht verfügbar |