| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J117TU,LF Toshiba
Description: MOSFET P-CHANNEL 30V 2A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V.
Weitere Produktangebote SSM3J117TU,LF nach Preis ab 0.21 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM3J117TU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CHANNEL 30V 2A UFMPackaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V |
auf Bestellung 2048 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3J117TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 30V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 2048 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |