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SSM3J133TU,LF

SSM3J133TU,LF Toshiba Semiconductor and Storage

SSM3J133TU_datasheet_en_20140301.pdf?did=6640&prodName=SSM3J133TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3J133TU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 5.5A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V.

Weitere Produktangebote SSM3J133TU,LF nach Preis ab 0.24 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM3J133TU,LF SSM3J133TU,LF Hersteller : Toshiba 509docget.jsptypedatasheetlangenpidssm3j133tu.jsptypedatasheetlangen.pdf Trans MOSFET P-CH Si 20V 5.5A 3-Pin UFM T/R
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.47 EUR
489+ 0.31 EUR
505+ 0.29 EUR
Mindestbestellmenge: 335
SSM3J133TU,LF SSM3J133TU,LF Hersteller : Toshiba 509docget.jsptypedatasheetlangenpidssm3j133tu.jsptypedatasheetlangen.pdf Trans MOSFET P-CH Si 20V 5.5A 3-Pin UFM T/R
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
283+0.56 EUR
332+ 0.46 EUR
335+ 0.44 EUR
489+ 0.29 EUR
505+ 0.27 EUR
Mindestbestellmenge: 283
SSM3J133TU,LF SSM3J133TU,LF Hersteller : Toshiba SSM3J133TU_datasheet_en_20140301-1022851.pdf MOSFET Small-signal MOSFET P-Channel
auf Bestellung 25706 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.99 EUR
65+ 0.81 EUR
121+ 0.43 EUR
1000+ 0.32 EUR
3000+ 0.28 EUR
9000+ 0.26 EUR
24000+ 0.24 EUR
Mindestbestellmenge: 53
SSM3J133TU,LF SSM3J133TU,LF Hersteller : Toshiba Semiconductor and Storage SSM3J133TU_datasheet_en_20140301.pdf?did=6640&prodName=SSM3J133TU Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 86475 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SSM3J133TU,LF SSM3J133TU,LF Hersteller : Toshiba 509docget.jsptypedatasheetlangenpidssm3j133tu.jsptypedatasheetlangen.pdf Trans MOSFET P-CH Si 20V 5.5A 3-Pin UFM T/R
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