SSM3J134TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.2A UFM
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
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Technische Details SSM3J134TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.2A UFM, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3J134TU,LF nach Preis ab 0.17 EUR bis 0.82 EUR
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SSM3J134TU,LF | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=-3.2A VDSS=-20V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J134TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 3.2A UFMInput Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
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