SSM3J134TU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 3.2A UFM, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).