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SSM3J134TU,LF

SSM3J134TU,LF Toshiba Semiconductor and Storage

SSM3J134TU_datasheet_en_20140301.pdf?did=6579&prodName=SSM3J134TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 2508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
33+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J134TU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 3.2A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V.

Weitere Produktangebote SSM3J134TU,LF nach Preis ab 0.14 EUR bis 0.72 EUR

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SSM3J134TU,LF SSM3J134TU,LF Hersteller : Toshiba SSM3J134TU_datasheet_en_20140301-1358545.pdf MOSFETs LowON Res MOSFET ID=-3.2A VDSS=-20V
auf Bestellung 9880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.5 EUR
100+0.25 EUR
1000+0.2 EUR
3000+0.16 EUR
9000+0.15 EUR
24000+0.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J134TU,LF SSM3J134TU,LF Hersteller : Toshiba 4520docget.jsplangenpidssm3j134tutypedatasheet.jsplangenpidssm3j134tu.pdf Trans MOSFET P-CH Si 20V 3.2A 3-Pin UFM T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J134TU,LF SSM3J134TU,LF Hersteller : Toshiba 4520docget.jsplangenpidssm3j134tutypedatasheet.jsplangenpidssm3j134tu.pdf Trans MOSFET P-CH Si 20V 3.2A 3-Pin UFM T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J134TU,LF Hersteller : Toshiba 4520docget.jsplangenpidssm3j134tutypedatasheet.jsplangenpidssm3j134tu.pdf Trans MOSFET P-CH Si 20V 3.2A 3-Pin UFM T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J134TU,LF SSM3J134TU,LF Hersteller : Toshiba Semiconductor and Storage SSM3J134TU_datasheet_en_20140301.pdf?did=6579&prodName=SSM3J134TU Description: MOSFET P-CH 20V 3.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH