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SSM3J143TU,LXHF

SSM3J143TU,LXHF Toshiba

SSM3J143TU_datasheet_en_20210528-1528009.pdf Hersteller: Toshiba
MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-5.5A
auf Bestellung 4860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.62 EUR
100+0.43 EUR
500+0.34 EUR
1000+0.27 EUR
3000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 4
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Technische Details SSM3J143TU,LXHF Toshiba

Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

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SSM3J143TU,LXHF SSM3J143TU,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59191&prodName=SSM3J143TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
27+0.66 EUR
100+0.43 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J143TU,LXHF SSM3J143TU,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59191&prodName=SSM3J143TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH