SSM3J15F,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.083 EUR |
| 6000+ | 0.074 EUR |
| 9000+ | 0.07 EUR |
| 15000+ | 0.064 EUR |
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Technische Details SSM3J15F,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI, Supplier Device Package: S-Mini, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V.
Weitere Produktangebote SSM3J15F,LF nach Preis ab 0.071 EUR bis 0.42 EUR
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SSM3J15F,LF | Toshiba |
MOSFETs Sm-signal/Hi-Speed S-Mini (SOT-346) |
auf Bestellung 10588 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J15F,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA S-MINI Vgs(th) (Max) @ Id: 1.7V @ 100µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: S-Mini |
auf Bestellung 15073 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3J15F,LF |
|
Hersteller: Toshiba
MOSFETs Sm-signal/Hi-Speed S-Mini (SOT-346)
MOSFETs Sm-signal/Hi-Speed S-Mini (SOT-346)
auf Bestellung 10588 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.42 EUR |
| 14+ | 0.25 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| 3000+ | 0.082 EUR |
| 6000+ | 0.071 EUR |
| SSM3J15F,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: S-Mini
Description: MOSFET P-CH 30V 100MA S-MINI
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: S-Mini
auf Bestellung 15073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 84+ | 0.25 EUR |
| 135+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |