SSM3J15F,LF

SSM3J15F,LF Toshiba Semiconductor and Storage


docget.jsp?did=22748&prodName=SSM3J15F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J15F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 100MA S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V.

Weitere Produktangebote SSM3J15F,LF nach Preis ab 0.06 EUR bis 0.38 EUR

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SSM3J15F,LF SSM3J15F,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22748&prodName=SSM3J15F Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 18154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.20 EUR
147+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J15F,LF SSM3J15F,LF Hersteller : Toshiba SSM3J15F_datasheet_en_20140301-1661010.pdf MOSFET Sm-signal/Hi-Speed S-Mini (SOT-346)
auf Bestellung 8312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.38 EUR
10+0.32 EUR
100+0.17 EUR
500+0.11 EUR
1000+0.08 EUR
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH