SSM3J15FV,L3F

SSM3J15FV,L3F Toshiba Semiconductor and Storage


docget.jsp?did=593&prodName=SSM3J15FV
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.046 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J15FV,L3F Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 100MA VESM, Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Part Status: Active, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3J15FV,L3F nach Preis ab 0.039 EUR bis 0.33 EUR

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SSM3J15FV,L3F SSM3J15FV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=593&prodName=SSM3J15FV Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 14326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
112+0.16 EUR
229+0.077 EUR
500+0.068 EUR
1000+0.057 EUR
2000+0.052 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J15FV,L3F SSM3J15FV,L3F Hersteller : Toshiba SSM3J15FV_datasheet_en_20171011-1916536.pdf MOSFETs Small-signal MOSFET High Speed Switching
auf Bestellung 55765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.33 EUR
15+0.2 EUR
100+0.09 EUR
1000+0.058 EUR
2500+0.051 EUR
8000+0.04 EUR
24000+0.039 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH