SSM3J15FV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.057 EUR |
| 16000+ | 0.047 EUR |
| 24000+ | 0.046 EUR |
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Technische Details SSM3J15FV,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: VESM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V.
Weitere Produktangebote SSM3J15FV,L3F nach Preis ab 0.028 EUR bis 0.56 EUR
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SSM3J15FV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 0.1A 3-Pin VESM T/R |
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SSM3J15FV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 0.1A 3-Pin VESM T/R |
auf Bestellung 29854 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J15FV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
auf Bestellung 38690 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J15FV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 0.1A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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| SSM3J15FV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 0.1A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |