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SSM3J168F,LF

SSM3J168F,LF Toshiba Semiconductor and Storage

SSM3J168F_datasheet_en_20220422.pdf?did=55835&prodName=SSM3J168F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J168F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 400MA S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V.

Weitere Produktangebote SSM3J168F,LF nach Preis ab 0.14 EUR bis 0.72 EUR

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SSM3J168F,LF SSM3J168F,LF Hersteller : Toshiba SSM3J168F_datasheet_en_20240412-1140042.pdf MOSFETs LowON Res MOSFET ID=--0.4A VDSS=-60V
auf Bestellung 109908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
3000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J168F,LF SSM3J168F,LF Hersteller : Toshiba Semiconductor and Storage SSM3J168F_datasheet_en_20220422.pdf?did=55835&prodName=SSM3J168F Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
auf Bestellung 16825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
38+0.47 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J168F,LF SSM3J168F,LF Hersteller : Toshiba ssm3j168f_datasheet_en_20210528.pdf Trans MOSFET P-CH Si 60V 0.4A 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
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