SSM3J168F,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details SSM3J168F,LXHF Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: S-Mini, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM3J168F,LXHF nach Preis ab 0.22 EUR bis 1.12 EUR
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SSM3J168F,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS LOW RON VDS:-60V VGSS:+10/- Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: S-Mini Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9878 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J168F,LXHF | Hersteller : Toshiba |
MOSFET SMOS Low RON Vds:-60 V Vgss:+10/-20V Id: |
auf Bestellung 14950 Stücke: Lieferzeit 14-28 Tag (e) |
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