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SSM3J325F,LF

SSM3J325F,LF Toshiba Semiconductor and Storage

SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J325F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 2A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Power Dissipation (Max): 600mW (Ta), Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.

Weitere Produktangebote SSM3J325F,LF nach Preis ab 0.079 EUR bis 0.55 EUR

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SSM3J325F,LF SSM3J325F,LF Hersteller : Toshiba SSM3J325F_datasheet_en_20161110-1916406.pdf MOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.54 EUR
10+0.33 EUR
100+0.14 EUR
1000+0.12 EUR
3000+0.095 EUR
9000+0.083 EUR
24000+0.079 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J325F,LF SSM3J325F,LF Hersteller : Toshiba Semiconductor and Storage SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 6514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J325F,LF Hersteller : Toshiba 6268981448271162689380928924ssm3j325f_datasheet_en_20161110.pdf.pdf Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
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