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SSM3J325F,LF

SSM3J325F,LF Toshiba Semiconductor and Storage

SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 5225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.56 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 28
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Technische Details SSM3J325F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 2A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Power Dissipation (Max): 600mW (Ta), Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.

Weitere Produktangebote SSM3J325F,LF nach Preis ab 0.13 EUR bis 0.92 EUR

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SSM3J325F,LF SSM3J325F,LF Hersteller : Toshiba SSM3J325F_datasheet_en_20161110-1916406.pdf MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC
auf Bestellung 8585 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
75+ 0.7 EUR
131+ 0.4 EUR
1000+ 0.2 EUR
3000+ 0.17 EUR
9000+ 0.14 EUR
24000+ 0.13 EUR
Mindestbestellmenge: 57
SSM3J325F,LF Hersteller : Toshiba 6268981448271162689380928924ssm3j325f_datasheet_en_20161110.pdf.pdf Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
SSM3J325F,LF SSM3J325F,LF Hersteller : Toshiba Semiconductor and Storage SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Produkt ist nicht verfügbar