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SSM3J327R,LF(B
  • SSM3J327R,LF(B
  • SSM3J327R,LF(B

SSM3J327R,LF(B TOSHIBA

SSM3J327R.pdf
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Technische Details SSM3J327R,LF(B TOSHIBA

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F; ESD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.9A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±8V, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 4.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.