Technische Details SSM3J327R,LF(B Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.9A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±8V, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 4.6nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM3J327R,LF(B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM3J327R,LF(B | Hersteller : TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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+1 |
SSM3J327R,LF(B | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |