SSM3J327R,LF(B Toshiba

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F; ESD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.9A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±8V, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 4.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.