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SSM3J327R,LF

SSM3J327R,LF Toshiba Semiconductor and Storage

docget.jsp?did=2051&prodName=SSM3J327R
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.093 EUR
9000+0.076 EUR
15000+0.073 EUR
21000+0.071 EUR
30000+0.068 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J327R,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 3.9A SOT23F, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.

Weitere Produktangebote SSM3J327R,LF nach Preis ab 0.093 EUR bis 0.51 EUR

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SSM3J327R,LF SSM3J327R,LF Hersteller : Toshiba 583721525E0293B67C4F86129DE4B4242A59463398DF16892FFDFFAA495F361A.pdf MOSFETs Small-Signal MOSFET
auf Bestellung 11879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.31 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J327R,LF SSM3J327R,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=2051&prodName=SSM3J327R Description: MOSFET P-CH 20V 3.9A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 67463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH