auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.091 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J331R,LF Toshiba
Description: MOSFET P-CH 20V 4A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V.
Weitere Produktangebote SSM3J331R,LF nach Preis ab 0.11 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM3J331R,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 20V 4A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SSM3J331R,LF | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2805 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
SSM3J331R,LF | Hersteller : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2805 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SSM3J331R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
auf Bestellung 17988 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SSM3J331R,LF | Hersteller : Toshiba |
MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF |
auf Bestellung 6527 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SSM3J331R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SSM3J331R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SSM3J331R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SSM3J331R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |