SSM3J338R,LF
Produktcode: 127792
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Weitere Produktangebote SSM3J338R,LF nach Preis ab 0.13 EUR bis 0.79 EUR
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SSM3J338R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A |
auf Bestellung 254611 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 91911 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |

