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SSM3J338R,LF

SSM3J338R,LF Toshiba Semiconductor and Storage

SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 366000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
30000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3J338R,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 12V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V.

Weitere Produktangebote SSM3J338R,LF nach Preis ab 0.19 EUR bis 0.83 EUR

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Preis ohne MwSt
SSM3J338R,LF SSM3J338R,LF Hersteller : Toshiba SSM3J338R_datasheet_en_20210916-1916499.pdf MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A
auf Bestellung 559480 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
72+0.73 EUR
91+ 0.58 EUR
189+ 0.28 EUR
1000+ 0.23 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
24000+ 0.19 EUR
Mindestbestellmenge: 72
SSM3J338R,LF SSM3J338R,LF Hersteller : Toshiba Semiconductor and Storage SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 370375 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 32
SSM3J338R,LF SSM3J338R,LF Hersteller : Toshiba ssm3j338r_datasheet_en_20210916.pdf Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
SSM3J338R,LF
Produktcode: 127792 		SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
SSM3J338R,LF SSM3J338R,LF Hersteller : Toshiba ssm3j338r_datasheet_en_20210916.pdf Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar