SSM3J338R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 249000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 15000+ | 0.12 EUR |
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Technische Details SSM3J338R,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V.
Weitere Produktangebote SSM3J338R,LF nach Preis ab 0.13 EUR bis 0.70 EUR
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SSM3J338R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
auf Bestellung 255856 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A |
auf Bestellung 491879 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J338R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J338R,LF Produktcode: 127792
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SSM3J338R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |