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SSM3J352F,LF

SSM3J352F,LF Toshiba Semiconductor and Storage

SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J352F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 2A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V.

Weitere Produktangebote SSM3J352F,LF nach Preis ab 0.11 EUR bis 0.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM3J352F,LF SSM3J352F,LF Toshiba SSM3J352F_datasheet_en_20161219-1289318.pdf MOSFETs LowON Res MOSFET ID=-2A VDSS=-20V
auf Bestellung 21973 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.74 EUR
10+0.45 EUR
100+0.21 EUR
1000+0.19 EUR
3000+0.13 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J352F,LF SSM3J352F,LF Toshiba Semiconductor and Storage SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F Description: MOSFET P-CH 20V 2A S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4478 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 28 Stücke
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SSM3J352F,LF Toshiba SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J352F,LF SSM3J352F_datasheet_en_20161219-1289318.pdf
SSM3J352F,LF
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=-2A VDSS=-20V
auf Bestellung 21973 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+0.74 EUR
10+0.45 EUR
100+0.21 EUR
1000+0.19 EUR
3000+0.13 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J352F,LF SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F
SSM3J352F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4478 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J352F,LF SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH