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SSM3J352F,LF

SSM3J352F,LF Toshiba Semiconductor and Storage

SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3J352F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 2A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V.

Weitere Produktangebote SSM3J352F,LF nach Preis ab 0.16 EUR bis 1.14 EUR

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SSM3J352F,LF SSM3J352F,LF Hersteller : Toshiba Semiconductor and Storage SSM3J352F_datasheet_en_20161219.pdf?did=30804&prodName=SSM3J352F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
auf Bestellung 5868 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 23
SSM3J352F,LF SSM3J352F,LF Hersteller : Toshiba SSM3J352F_datasheet_en_20161219-1289318.pdf MOSFET LowON Res MOSFET ID=-2A VDSS=-20V
auf Bestellung 23164 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.14 EUR
66+ 0.79 EUR
159+ 0.33 EUR
1000+ 0.24 EUR
3000+ 0.19 EUR
9000+ 0.18 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 46