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SSM3J353F,LF

SSM3J353F,LF Toshiba Semiconductor and Storage

SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3J353F,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 2A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: S-Mini, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +20V, -25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V.

Weitere Produktangebote SSM3J353F,LF nach Preis ab 0.19 EUR bis 1.15 EUR

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SSM3J353F,LF SSM3J353F,LF Hersteller : Toshiba Semiconductor and Storage SSM3J353F_datasheet_en_20161219.pdf?did=35740&prodName=SSM3J353F Description: MOSFET P-CH 30V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
auf Bestellung 20288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
34+ 0.66 EUR
100+ 0.34 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 24
SSM3J353F,LF SSM3J353F,LF Hersteller : Toshiba SSM3J353F_datasheet_en_20161219-981025.pdf MOSFET Small-signal MOSFET ID -2A, VDSS -30V
auf Bestellung 11270 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.15 EUR
62+ 0.84 EUR
109+ 0.48 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
3000+ 0.21 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 46