SSM3J355R Toshiba

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F; ESD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Pulsed drain current: 24A, Power dissipation: 2W, Case: SOT23F, Gate-source voltage: ±10V, On-state resistance: 52.3mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.