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SSM3J356R,LXHF

SSM3J356R,LXHF Toshiba


SSM3J356R_datasheet_en_20240723-1916485.pdf Hersteller: Toshiba
MOSFETs P Channel -60V -2A AECQ MOSFET
auf Bestellung 22871 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.55 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.25 EUR
3000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 4
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Technische Details SSM3J356R,LXHF Toshiba

Description: AECQ MOSFET PCH -60V -2A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23F, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SSM3J356R,LXHF nach Preis ab 0.25 EUR bis 0.77 EUR

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SSM3J356R,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=30685&prodName=SSM3J356R Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.61 EUR
100+0.4 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J356R,LXHF SSM3J356R,LXHF Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J356R,LXHF SSM3J356R,LXHF Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J356R,LXHF SSM3J356R,LXHF Hersteller : Toshiba docget.pdf Trans MOSFET P-CH Si 60V 2A Automotive 3-Pin SOT-23F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J356R,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=30685&prodName=SSM3J356R Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH