auf Bestellung 3109 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.14 EUR |
| 59+ | 0.88 EUR |
| 107+ | 0.49 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 24000+ | 0.27 EUR |
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Technische Details SSM3J356R,LXHF Toshiba
Description: AECQ MOSFET PCH -60V -2A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.
Weitere Produktangebote SSM3J356R,LXHF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SSM3J356R,LXHF | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 60V 2A Automotive 3-Pin SOT-23F |
Produkt ist nicht verfügbar |
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SSM3J356R,LXHF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 2A Automotive 3-Pin SOT-23F |
Produkt ist nicht verfügbar |
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SSM3J356R,LXHF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 2A Automotive 3-Pin SOT-23F |
Produkt ist nicht verfügbar |
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SSM3J356R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM3J356R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
Produkt ist nicht verfügbar |