SSM3J356R,LF
Produktcode: 202544
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SSM3J356R,LF nach Preis ab 0.13 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Toshiba |
MOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V |
auf Bestellung 62117 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 240513 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| 21000+ | 0.13 EUR |
| SSM3J356R,LF |
|
Hersteller: Toshiba
MOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V
MOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V
auf Bestellung 62117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| SSM3J356R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 240513 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 43+ | 0.5 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |