SSM3J356R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 62962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.1 EUR |
| 15000+ | 0.098 EUR |
| 21000+ | 0.096 EUR |
| 30000+ | 0.091 EUR |
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Technische Details SSM3J356R,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.
Weitere Produktangebote SSM3J356R,LF nach Preis ab 0.074 EUR bis 0.61 EUR
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SSM3J356R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F T/R Automotive AEC-Q101 |
auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J356R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F T/R Automotive AEC-Q101 |
auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J356R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 62962 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V |
auf Bestellung 49336 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF Produktcode: 202544
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SSM3J356R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 60V 2A 3-Pin SOT-23F T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |