SSM3J356R,LF
Produktcode: 202544
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Hersteller:
Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SSM3J356R,LF nach Preis ab 0.11 EUR bis 0.67 EUR
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SSM3J356R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V |
auf Bestellung 62117 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 68602 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3J356R,LF | Hersteller : Toshiba |
MOSFET P-CH 60V 2A SOT-23F Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
