SSM3J358R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
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Technische Details SSM3J358R,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V.
Weitere Produktangebote SSM3J358R,LF nach Preis ab 0.13 EUR bis 0.6 EUR
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SSM3J358R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V |
auf Bestellung 29265 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J358R,LF | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V |
auf Bestellung 260776 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3J358R,LF | Hersteller : Toshiba |
P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1331 @ 10; Qg, нКл = 38,5 @ 8 В; Rds = 22,1 мОм @ 6 A, 8 В; Ugs(th) = 1 В @ 1 мА; Р, Вт = 1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23F-3 |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J358R,LF Produktcode: 168844
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