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SSM3J35CT,L3F

SSM3J35CT,L3F Toshiba

SSM3J35CT_datasheet_en_20150929-1138321.pdf Hersteller: Toshiba
MOSFETs Small-signal MOSFET ID=-0.1A VDSS=-20V
auf Bestellung 28161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.30 EUR
14+0.20 EUR
100+0.10 EUR
1000+0.08 EUR
2500+0.07 EUR
10000+0.06 EUR
20000+0.06 EUR
Mindestbestellmenge: 10
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Technische Details SSM3J35CT,L3F Toshiba

Description: MOSFET P-CHANNEL 20V 100MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V.

Weitere Produktangebote SSM3J35CT,L3F nach Preis ab 0.08 EUR bis 0.53 EUR

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Preis
SSM3J35CT,L3F SSM3J35CT,L3F Hersteller : Toshiba Semiconductor and Storage Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
auf Bestellung 6208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.10 EUR
2000+0.09 EUR
5000+0.08 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J35CT,L3F SSM3J35CT,L3F Hersteller : Toshiba Semiconductor and Storage Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
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Im Einkaufswagen  Stück im Wert von  UAH