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SSM3J36TU,LF

SSM3J36TU,LF Toshiba Semiconductor and Storage

docget.jsp?did=11658&prodName=SSM3J36TU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J36TU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 330MA UFM, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), FET Type: P-Channel.

Weitere Produktangebote SSM3J36TU,LF nach Preis ab 0.099 EUR bis 0.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM3J36TU,LF SSM3J36TU,LF Toshiba 8BD0F26ECDBB2AE18B78613A211F6A5EAC361AA39DAFC18EE3C32F57DB1AA606.pdf MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F)
auf Bestellung 5340 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.57 EUR
10+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.11 EUR
6000+0.099 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36TU,LF SSM3J36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11658&prodName=SSM3J36TU Description: MOSFET P-CH 20V 330MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
auf Bestellung 8725 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36TU,LF Toshiba docget.jsp?did=11658&prodName=SSM3J36TU Trans MOSFET P-CH Si 20V 0.33A 3-Pin UFM T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
265+0.67 EUR
382+0.44 EUR
415+0.39 EUR
419+0.38 EUR
780+0.19 EUR
788+0.18 EUR
975+0.14 EUR
1330+0.1 EUR
Mindestbestellmenge: 265 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36TU,LF 8BD0F26ECDBB2AE18B78613A211F6A5EAC361AA39DAFC18EE3C32F57DB1AA606.pdf
SSM3J36TU,LF
Hersteller: Toshiba
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F)
auf Bestellung 5340 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.57 EUR
10+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.11 EUR
6000+0.099 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36TU,LF docget.jsp?did=11658&prodName=SSM3J36TU
SSM3J36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
auf Bestellung 8725 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.15 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36TU,LF docget.jsp?did=11658&prodName=SSM3J36TU
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 0.33A 3-Pin UFM T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
265+0.67 EUR
382+0.44 EUR
415+0.39 EUR
419+0.38 EUR
780+0.19 EUR
788+0.18 EUR
975+0.14 EUR
1330+0.1 EUR
Mindestbestellmenge: 265 Stücke
Im Einkaufswagen  Stück im Wert von  UAH