SSM3J372R,LF
Produktcode: 178119
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Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SSM3J372R,LF nach Preis ab 0.14 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM3J372R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): +12V, -6V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J372R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): +12V, -6V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 4803 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J372R,LF | Toshiba |
MOSFETs Small Signal MOSFET P-ch Vdss:-30V Vgss:-12/+6V Id:-6A |
auf Bestellung 20991 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J372R,LF | Toshiba |
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101 |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SSM3J372R,LF | Toshiba |
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101 |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +12V, -6V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +12V, -6V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| SSM3J372R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +12V, -6V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): +12V, -6V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
auf Bestellung 4803 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 50+ | 0.43 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| SSM3J372R,LF |
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Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch Vdss:-30V Vgss:-12/+6V Id:-6A
MOSFETs Small Signal MOSFET P-ch Vdss:-30V Vgss:-12/+6V Id:-6A
auf Bestellung 20991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| SSM3J372R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| SSM3J372R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)