| Anzahl | Privatkunde |
|---|---|
| 873+ | 0.2 EUR |
| 892+ | 0.19 EUR |
| 1467+ | 0.11 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.09 EUR |
| 15000+ | 0.081 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J56MFV,L3F Toshiba
Description: MOSFET P-CH 20V 800MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V.
Weitere Produktangebote SSM3J56MFV,L3F nach Preis ab 0.077 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM3J56MFV,L3F | Toshiba |
 Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R |
auf Bestellung 17012 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SSM3J56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 800MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
auf Bestellung 7344 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SSM3J56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 800MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
auf Bestellung 5800 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 5800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM3J56MFV,L3F |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R
Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R
auf Bestellung 17012 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 254+ | 0.69 EUR |
| 362+ | 0.46 EUR |
| 366+ | 0.45 EUR |
| 873+ | 0.18 EUR |
| 882+ | 0.17 EUR |
| 1467+ | 0.094 EUR |
| 3000+ | 0.093 EUR |
| 6000+ | 0.077 EUR |
| SSM3J56MFV,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 7344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 44+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| SSM3J56MFV,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 5800 Stücke:
Lieferzeit 10-14 Tag (e)