SSM3J64CTC,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J64CTC,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3C, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V.
Weitere Produktangebote SSM3J64CTC,L3F nach Preis ab 0.11 EUR bis 0.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM3J64CTC,L3F | Hersteller : Toshiba |
MOSFETs Small Signal MOSFET P-ch Vdss:-12V Vgss:+/-10V Id:-1A |
auf Bestellung 12581 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SSM3J64CTC,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 1A CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
auf Bestellung 39773 Stücke: Lieferzeit 10-14 Tag (e) |
|