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SSM3J64CTC,L3F

SSM3J64CTC,L3F Toshiba

SSM3J64CTC_datasheet_en_20210311-1528170.pdf
Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch Vdss:-12V Vgss:+/-10V Id:-1A
auf Bestellung 12581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.38 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.14 EUR
2500+0.12 EUR
10000+0.11 EUR
Mindestbestellmenge: 5
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Technische Details SSM3J64CTC,L3F Toshiba

Description: MOSFET P-CH 12V 1A CST3C, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3C, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V.

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SSM3J64CTC,L3F SSM3J64CTC,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.15 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J64CTC,L3F SSM3J64CTC,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH