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SSM3J66MFV,L3XHF

SSM3J66MFV,L3XHF Toshiba Semiconductor and Storage

docget.jsp?did=61143&prodName=SSM3J66MFV Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.097 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J66MFV,L3XHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VESM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SSM3J66MFV,L3XHF nach Preis ab 0.11 EUR bis 0.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM3J66MFV,L3XHF SSM3J66MFV,L3XHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=61143&prodName=SSM3J66MFV Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.33 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J66MFV,L3XHF SSM3J66MFV,L3XHF Hersteller : Toshiba SSM3J66MFV_datasheet_en_20180410-1627357.pdf MOSFET AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723
auf Bestellung 11918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.66 EUR
10+0.49 EUR
100+0.28 EUR
500+0.18 EUR
1000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH