SSM3K09FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.13 EUR |
| 15000+ | 0.12 EUR |
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Technische Details SSM3K09FU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 1.8V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K09FU,LF nach Preis ab 0.12 EUR bis 0.83 EUR
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SSM3K09FU,LF | Toshiba |
MOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V |
auf Bestellung 7617 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K09FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 400MA USM Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.8V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 33255 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3K09FU,LF |
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Hersteller: Toshiba
MOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V
MOSFETs Small-signal MOSFET ID 0.4A, VDSS 30V
auf Bestellung 7617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.12 EUR |
| SSM3K09FU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 33255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |