SSM3K116TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
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Technische Details SSM3K116TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM, Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K116TU,LF nach Preis ab 0.19 EUR bis 0.86 EUR
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SSM3K116TU,LF | Hersteller : Toshiba |
MOSFETs Small-signal MOSFET High Speed Switching |
auf Bestellung 3070 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K116TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.2A UFM Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 39100 Stücke: Lieferzeit 10-14 Tag (e) |
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