Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM3K122TU,LF
SSM3K122TU,LF

SSM3K122TU,LF Toshiba Semiconductor and Storage

docget.jsp?did=10022&prodName=SSM3K122TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM3K122TU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 20V 2A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V.

Weitere Produktangebote SSM3K122TU,LF nach Preis ab 0.13 EUR bis 0.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM3K122TU,LF SSM3K122TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=10022&prodName=SSM3K122TU Description: MOSFET N-CH 20V 2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 12650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K122TU,LF SSM3K122TU,LF Hersteller : Toshiba SSM3K122TU_datasheet_en_20200622-1627267.pdf MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=2.0A, RDS(ON)=0.123Ohm a. 4V, in UFM package
auf Bestellung 21329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.57 EUR
10+0.45 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.17 EUR
3000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH