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SSM3K123TU,LF

SSM3K123TU,LF Toshiba

SSM3K123TU_datasheet_en_20140301-1916161.pdf Hersteller: Toshiba
MOSFET UFM S-MOS Pd: 0.8W F: 1MHz
auf Bestellung 23609 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
44+1.2 EUR
54+ 0.96 EUR
100+ 0.66 EUR
500+ 0.49 EUR
1000+ 0.37 EUR
3000+ 0.35 EUR
Mindestbestellmenge: 44
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Technische Details SSM3K123TU,LF Toshiba

Description: MOSFET N-CH 20V 4.2A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V.

Weitere Produktangebote SSM3K123TU,LF nach Preis ab 0.7 EUR bis 1.27 EUR

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SSM3K123TU,LF SSM3K123TU,LF Hersteller : Toshiba Semiconductor and Storage SSM3K123TU_datasheet_en_20140301.pdf?did=10012&prodName=SSM3K123TU Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 397 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
26+ 1.03 EUR
100+ 0.7 EUR
Mindestbestellmenge: 21
SSM3K123TU,LF SSM3K123TU,LF Hersteller : Toshiba Semiconductor and Storage SSM3K123TU_datasheet_en_20140301.pdf?did=10012&prodName=SSM3K123TU Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
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