auf Bestellung 17516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.43 EUR |
| 11+ | 0.26 EUR |
| 100+ | 0.12 EUR |
| 1000+ | 0.09 EUR |
| 2500+ | 0.08 EUR |
| 10000+ | 0.07 EUR |
| 20000+ | 0.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K15ACT,L3F Toshiba
Description: MOSFET N-CH 30V 100MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V.
Weitere Produktangebote SSM3K15ACT,L3F nach Preis ab 0.08 EUR bis 0.44 EUR
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SSM3K15ACT,L3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
auf Bestellung 8425 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K15ACT,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R |
Produkt ist nicht verfügbar |
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SSM3K15ACT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
Produkt ist nicht verfügbar |