SSM3K15ACT,L3F

SSM3K15ACT,L3F Toshiba Semiconductor and Storage


SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.07 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM3K15ACT,L3F Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 100MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V.

Weitere Produktangebote SSM3K15ACT,L3F nach Preis ab 0.084 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM3K15ACT,L3F SSM3K15ACT,L3F Hersteller : Toshiba Semiconductor and Storage SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 34100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
48+ 0.37 EUR
100+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.091 EUR
5000+ 0.084 EUR
Mindestbestellmenge: 34
SSM3K15ACT,L3F SSM3K15ACT,L3F Hersteller : Toshiba SSM3K15ACT_datasheet_en_20140301-1144185.pdf MOSFET Small-signal MOSFET
auf Bestellung 10285 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
68+0.77 EUR
95+ 0.55 EUR
233+ 0.22 EUR
1000+ 0.14 EUR
2500+ 0.12 EUR
10000+ 0.1 EUR
20000+ 0.096 EUR
Mindestbestellmenge: 68
SSM3K15ACT,L3F Hersteller : Toshiba 267docget.jsptypedatasheetlangenpidssm3k15act.jsptypedatasheetlangen.pdf Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R
Produkt ist nicht verfügbar