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SSM3K16FV,L3F

SSM3K16FV,L3F Toshiba

SSM3K16FV_datasheet_en_20140301-1316084.pdf
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
auf Bestellung 21029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
16+0.18 EUR
100+0.11 EUR
500+0.081 EUR
1000+0.063 EUR
5000+0.049 EUR
8000+0.048 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K16FV,L3F Toshiba

Description: PB-F VESM S-MOS (LF) TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3K16FV,L3F nach Preis ab 0.19 EUR bis 0.32 EUR

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SSM3K16FV,L3F SSM3K16FV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
95+0.19 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16FV,L3F SSM3K16FV,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH