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SSM3K16FV,L3F

SSM3K16FV,L3F Toshiba Semiconductor and Storage

docget.jsp?did=591&prodName=SSM3K16FV
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.068 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K16FV,L3F Toshiba Semiconductor and Storage

Description: PB-F VESM S-MOS (LF) TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3K16FV,L3F nach Preis ab 0.057 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM3K16FV,L3F SSM3K16FV,L3F Toshiba 119FD5A51DCAE14D00834635F8A1056CBAC51DB66A52B8816F437FD15C101B53.pdf MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
auf Bestellung 22803 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.38 EUR
15+0.24 EUR
100+0.14 EUR
500+0.11 EUR
1000+0.083 EUR
5000+0.067 EUR
8000+0.057 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16FV,L3F SSM3K16FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
auf Bestellung 13162 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
87+0.24 EUR
122+0.18 EUR
141+0.15 EUR
500+0.11 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16FV,L3F 119FD5A51DCAE14D00834635F8A1056CBAC51DB66A52B8816F437FD15C101B53.pdf
SSM3K16FV,L3F
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
auf Bestellung 22803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+0.38 EUR
15+0.24 EUR
100+0.14 EUR
500+0.11 EUR
1000+0.083 EUR
5000+0.067 EUR
8000+0.057 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K16FV,L3F docget.jsp?did=591&prodName=SSM3K16FV
SSM3K16FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
auf Bestellung 13162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
122+0.18 EUR
141+0.15 EUR
500+0.11 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH