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SSM3K16FV,L3F

SSM3K16FV,L3F Toshiba

SSM3K16FV_datasheet_en_20140301-1316084.pdf Hersteller: Toshiba
MOSFET LowON Res MOSFET ID=0.1A VDSS=20V
auf Bestellung 7980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
97+0.54 EUR
118+ 0.44 EUR
223+ 0.23 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2500+ 0.096 EUR
8000+ 0.068 EUR
Mindestbestellmenge: 97
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Produktbewertung abgeben

Technische Details SSM3K16FV,L3F Toshiba

Description: PB-F VESM S-MOS (LF) TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V.

Weitere Produktangebote SSM3K16FV,L3F nach Preis ab 0.086 EUR bis 0.49 EUR

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SSM3K16FV,L3F Hersteller : Toshiba Semiconductor and Storage SSM3K16FV_datasheet_en_20140301.pdf?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 8912 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
75+ 0.35 EUR
153+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
2000+ 0.086 EUR
Mindestbestellmenge: 53
SSM3K16FV,L3F Hersteller : Toshiba Semiconductor and Storage SSM3K16FV_datasheet_en_20140301.pdf?did=591&prodName=SSM3K16FV Description: PB-F VESM S-MOS (LF) TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
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