SSM3K17FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.09 EUR |
| 9000+ | 0.086 EUR |
| 15000+ | 0.08 EUR |
| 21000+ | 0.076 EUR |
| 30000+ | 0.073 EUR |
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Technische Details SSM3K17FU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1µA, Supplier Device Package: USM, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V.
Weitere Produktangebote SSM3K17FU,LF nach Preis ab 0.09 EUR bis 0.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM3K17FU,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=0.1A VDSS=50V |
auf Bestellung 31774 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K17FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 50V 100MA USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V |
auf Bestellung 90743 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K17FU,LF |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=0.1A VDSS=50V
MOSFETs LowON Res MOSFET ID=0.1A VDSS=50V
auf Bestellung 31774 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 12+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.09 EUR |
| SSM3K17FU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V
Description: MOSFET N-CH 50V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V
auf Bestellung 90743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 70+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |