Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM3K17FU,LF
SSM3K17FU,LF

SSM3K17FU,LF Toshiba Semiconductor and Storage

SSM3K17FU_datasheet_en_20140301.pdf?did=19617&prodName=SSM3K17FU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
6000+ 0.12 EUR
9000+ 0.098 EUR
30000+ 0.096 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM3K17FU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 50V 100MA USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1µA, Supplier Device Package: USM, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V.

Weitere Produktangebote SSM3K17FU,LF nach Preis ab 0.1 EUR bis 0.78 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM3K17FU,LF SSM3K17FU,LF Hersteller : Toshiba Semiconductor and Storage SSM3K17FU_datasheet_en_20140301.pdf?did=19617&prodName=SSM3K17FU Description: MOSFET N-CH 50V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 3 V
auf Bestellung 62275 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
50+ 0.52 EUR
103+ 0.25 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
SSM3K17FU,LF SSM3K17FU,LF Hersteller : Toshiba SSM3K17FU_datasheet_en_20140301-1316004.pdf MOSFET LowON Res MOSFET ID=0.1A VDSS=50V
auf Bestellung 47109 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
67+0.78 EUR
79+ 0.66 EUR
149+ 0.35 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
3000+ 0.14 EUR
9000+ 0.1 EUR
Mindestbestellmenge: 67