SSM3K2615R,LF

SSM3K2615R,LF Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 84000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
30000+ 0.31 EUR
75000+ 0.3 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3K2615R,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 2A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V.

Weitere Produktangebote SSM3K2615R,LF nach Preis ab 0.32 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM3K2615R,LF SSM3K2615R,LF Hersteller : Toshiba SSM3K2615R_datasheet_en_20150130-1760553.pdf MOSFET Small-Signal MOSFET
auf Bestellung 187286 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
65+ 0.81 EUR
100+ 0.58 EUR
500+ 0.42 EUR
1000+ 0.37 EUR
3000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 54
SSM3K2615R,LF SSM3K2615R,LF Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 87579 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
SSM3K2615R,LF SSM3K2615R,LF Hersteller : Toshiba 2docget.jspdid15672prodnamessm3k2615r.jspdid15672prodnamessm3k2615.pdf Trans MOSFET N-CH Si 60V 2A Automotive 3-Pin SOT-23F T/R
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