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SSM3K318R,LF

SSM3K318R,LF Toshiba Semiconductor and Storage

SSM3K318R_datasheet_en_20160823.pdf?did=29655&prodName=SSM3K318R
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K318R,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 2.5A SOT23F, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3K318R,LF nach Preis ab 0.17 EUR bis 0.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM3K318R,LF SSM3K318R,LF Hersteller : Toshiba E402C61508042EFE1FF60DA5C0BC2C48B9D673F5CD349C299C17BE7A3CD47362.pdf MOSFETs Small Signal Mosfet
auf Bestellung 18889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K318R,LF SSM3K318R,LF Hersteller : Toshiba Semiconductor and Storage SSM3K318R_datasheet_en_20160823.pdf?did=29655&prodName=SSM3K318R Description: MOSFET N-CH 60V 2.5A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 9890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH