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SSM3K329R,LF

SSM3K329R,LF Toshiba Semiconductor and Storage

SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
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Technische Details SSM3K329R,LF Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 3.5A 2-3Z1A, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V.

Weitere Produktangebote SSM3K329R,LF nach Preis ab 0.16 EUR bis 0.97 EUR

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SSM3K329R,LF SSM3K329R,LF Hersteller : Toshiba Semiconductor and Storage SSM3K329R_datasheet_en_20211022.pdf?did=2157&prodName=SSM3K329R Description: MOSFET N CH 30V 3.5A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 36382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.59 EUR
100+ 0.3 EUR
500+ 0.26 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 27
SSM3K329R,LF SSM3K329R,LF Hersteller : Toshiba SSM3K329R_datasheet_en_20211022-1150400.pdf MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
auf Bestellung 92811 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
77+ 0.68 EUR
169+ 0.31 EUR
1000+ 0.24 EUR
3000+ 0.21 EUR
9000+ 0.19 EUR
45000+ 0.16 EUR
Mindestbestellmenge: 54
SSM3K329R,LF SSM3K329R,LF Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
SSM3K329R,LF SSM3K329R,LF Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar