| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.25 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 45000+ | 0.13 EUR |
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Produktbewertung abgeben
Technische Details SSM3K329R,LF Toshiba
Description: MOSFET N CH 30V 3.5A 2-3Z1A, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Active, Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta).
Weitere Produktangebote SSM3K329R,LF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SSM3K329R,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 30V 3.5A 2-3Z1AInput Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Tape & Reel (TR) Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SSM3K329R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 3.5A 2-3Z1A Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SSM3K329R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SSM3K329R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N CH 30V 3.5A 2-3Z1A
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH