SSM3K329R,LF Toshiba

Description: MOSFET N CH 30V 3.5A 2-3Z1A, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Active, Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta).