SSM3K333R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K333R,LF Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V.
Weitere Produktangebote SSM3K333R,LF nach Preis ab 0.095 EUR bis 0.94 EUR
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SSM3K333R,LF | Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 16330 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K333R,LF | Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 16330 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K333R,LF | Toshiba |
MOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS |
auf Bestellung 56649 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K333R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 6A 2-3Z1A Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V |
auf Bestellung 32338 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K333R,LF |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R
auf Bestellung 16330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 669+ | 0.26 EUR |
| 1044+ | 0.17 EUR |
| 1397+ | 0.12 EUR |
| 1415+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.11 EUR |
| 15000+ | 0.11 EUR |
| SSM3K333R,LF |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R
auf Bestellung 16330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 406+ | 0.43 EUR |
| 662+ | 0.26 EUR |
| 669+ | 0.25 EUR |
| 1044+ | 0.15 EUR |
| 1052+ | 0.14 EUR |
| 1397+ | 0.1 EUR |
| 1415+ | 0.098 EUR |
| 3000+ | 0.096 EUR |
| 6000+ | 0.095 EUR |
| SSM3K333R,LF |
|
Hersteller: Toshiba
MOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS
MOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS
auf Bestellung 56649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 24000+ | 0.15 EUR |
| SSM3K333R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
Description: MOSFET N CH 30V 6A 2-3Z1A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
auf Bestellung 32338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 37+ | 0.57 EUR |
| 51+ | 0.42 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |