SSM3K339R TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F; ESD, Mounting: SMD, Power dissipation: 1W, Gate charge: 1.1nC, Polarisation: unipolar, Version: ESD, Drain current: 2A, Kind of channel: enhancement, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel; tape, Case: SOT23F, On-state resistance: 390mΩ.