| Anzahl | Privatkunde |
|---|---|
| 1177+ | 0.14 EUR |
| 1265+ | 0.13 EUR |
| 2106+ | 0.077 EUR |
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Technische Details SSM3K35CTC,L3F Toshiba
Description: MOSFET N-CH 20V 250MA CST3C, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: CST3C, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V.
Weitere Produktangebote SSM3K35CTC,L3F nach Preis ab 0.064 EUR bis 0.55 EUR
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SSM3K35CTC,L3F | Toshiba |
 Trans MOSFET N-CH Si 20V 0.25A 3-Pin CST-C T/R |
auf Bestellung 2170 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K35CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
auf Bestellung 18721 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K35CTC,L3F |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 20V 0.25A 3-Pin CST-C T/R
Trans MOSFET N-CH Si 20V 0.25A 3-Pin CST-C T/R
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 370+ | 0.46 EUR |
| 533+ | 0.31 EUR |
| 538+ | 0.3 EUR |
| 1177+ | 0.13 EUR |
| 1181+ | 0.12 EUR |
| 1265+ | 0.11 EUR |
| 2106+ | 0.064 EUR |
| SSM3K35CTC,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 18721 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 63+ | 0.33 EUR |
| 87+ | 0.24 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |