SSM3K361R Toshiba

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.2W; SOT23F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Power dissipation: 1.2W, Case: SOT23F, Gate-source voltage: ±20V, On-state resistance: 92mΩ, Mounting: SMD, Gate charge: 3.2nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Pulsed drain current: 14A.