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Technische Details SSM3K37FS Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; 100mW; SOT416F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.2A, Power dissipation: 0.1W, Case: SOT416F, On-state resistance: 1.65Ω, Mounting: SMD, Kind of channel: enhancement.
Weitere Produktangebote SSM3K37FS
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SSM3K37FS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; 100mW; SOT416F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.2A Power dissipation: 0.1W Case: SOT416F On-state resistance: 1.65Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM3K37FS,LF(T |
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; 100mW; SOT416F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Power dissipation: 0.1W
Case: SOT416F
On-state resistance: 1.65Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; 100mW; SOT416F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Power dissipation: 0.1W
Case: SOT416F
On-state resistance: 1.65Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH