SSM3K62TU,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMOS LOW RON NCH VDSS:20V ID:0.8
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
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Technische Details SSM3K62TU,LXHF Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K62TU,LXHF nach Preis ab 0.18 EUR bis 0.92 EUR
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SSM3K62TU,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH VDSS:20V ID:0.8 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9866 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K62TU,LXHF | Hersteller : Toshiba |
MOSFET SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2 |
auf Bestellung 5809 Stücke: Lieferzeit 14-28 Tag (e) |
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